DocumentCode
2621814
Title
A low-cost Horizontal Current Bipolar Transistor (HCBT) technology for the BiCMOS integration with FinFETs
Author
Suligoj, Tomislav ; Liu, Haitao ; Sin, Johnny K O ; Tsui, Kenneth ; Chen, Kevin J. ; Biljanovic, Perar ; Wang, Kong L.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
518
Lastpage
519
Abstract
In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. The electrical characteristics such as collector-emitter breakdown, charge sharing of the processed transistor is presented. The electrical properties of HCBTs are compared with the existing LBTs (Lateral Bipolar Transistors). This HCBT technology was applied in the BiCMOS integration with FinFETs.
Keywords
BiCMOS integrated circuits; bipolar transistors; semiconductor device breakdown; BiCMOS integration; FinFET; charge sharing; collector-emitter breakdown; electrical performance; electrical properties; horizontal current bipolar transistor; scaled transistor; semiconductor device breakdown; BiCMOS integrated circuits; Bipolar transistors; Etching; FinFETs; Germanium silicon alloys; MOSFETs; Planarization; Silicon compounds; Silicon germanium; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272372
Filename
1272372
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