Title :
A low-cost Horizontal Current Bipolar Transistor (HCBT) technology for the BiCMOS integration with FinFETs
Author :
Suligoj, Tomislav ; Liu, Haitao ; Sin, Johnny K O ; Tsui, Kenneth ; Chen, Kevin J. ; Biljanovic, Perar ; Wang, Kong L.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. The electrical characteristics such as collector-emitter breakdown, charge sharing of the processed transistor is presented. The electrical properties of HCBTs are compared with the existing LBTs (Lateral Bipolar Transistors). This HCBT technology was applied in the BiCMOS integration with FinFETs.
Keywords :
BiCMOS integrated circuits; bipolar transistors; semiconductor device breakdown; BiCMOS integration; FinFET; charge sharing; collector-emitter breakdown; electrical performance; electrical properties; horizontal current bipolar transistor; scaled transistor; semiconductor device breakdown; BiCMOS integrated circuits; Bipolar transistors; Etching; FinFETs; Germanium silicon alloys; MOSFETs; Planarization; Silicon compounds; Silicon germanium; System-on-a-chip;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272372
