DocumentCode
2621823
Title
Si doped p- and n-type Alx Ga1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate
Author
Saravanan, S. ; Dharmarasu, N. ; Vaccaro, P.O. ; Ocampo, J. M Zanardi ; Kubota, K. ; Saito, N.
Author_Institution
Adaptive Commun. Res. Labs., ATR, Kyoto, Japan
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
520
Lastpage
521
Abstract
Si doped p- and n-type Alx Ga1-xAs epilayers are grown by MBE growth at temperature range 600°C-660°C. The optimum growth conditions for Si doping with respect to substrate growth temperature and arsenic pressure for p- and n- type AlxGa1-xAs epilayers and fabrication of 2400 device-per-inch (dpi) LJ-LED arrays was reported. The Al composition and carrier concentration were determined from photoluminescence and Hall measurements respectively. The room temperature electroluminescence (EL) spectrum measured at various injection current.
Keywords
III-V semiconductors; aluminium compounds; carrier density; electroluminescence; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; 293 to 298 K; 600 to 660 degC; Al composition; Alx Ga1-xAs:Si; Hall measurements; Si doping; carrier concentration; carrier density; electroluminescence; high density lateral junction LED arrays; injection current; optimum growth conditions; photoluminescence; room temperature; semiconductor epitaxial layers; Artificial intelligence; Charge carrier processes; Cities and towns; Conductivity; Epitaxial layers; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272373
Filename
1272373
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