Title :
Si doped p- and n-type Alx Ga1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate
Author :
Saravanan, S. ; Dharmarasu, N. ; Vaccaro, P.O. ; Ocampo, J. M Zanardi ; Kubota, K. ; Saito, N.
Author_Institution :
Adaptive Commun. Res. Labs., ATR, Kyoto, Japan
Abstract :
Si doped p- and n-type Alx Ga1-xAs epilayers are grown by MBE growth at temperature range 600°C-660°C. The optimum growth conditions for Si doping with respect to substrate growth temperature and arsenic pressure for p- and n- type AlxGa1-xAs epilayers and fabrication of 2400 device-per-inch (dpi) LJ-LED arrays was reported. The Al composition and carrier concentration were determined from photoluminescence and Hall measurements respectively. The room temperature electroluminescence (EL) spectrum measured at various injection current.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; electroluminescence; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; 293 to 298 K; 600 to 660 degC; Al composition; Alx Ga1-xAs:Si; Hall measurements; Si doping; carrier concentration; carrier density; electroluminescence; high density lateral junction LED arrays; injection current; optimum growth conditions; photoluminescence; room temperature; semiconductor epitaxial layers; Artificial intelligence; Charge carrier processes; Cities and towns; Conductivity; Epitaxial layers; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Substrates; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272373
