• DocumentCode
    2621834
  • Title

    Realistic continuum hole states in Si-SiGe quantum wells

  • Author

    Galiev, V.I. ; Goldys, E.M. ; Kruglov, A.N. ; Polupanov, A.F. ; Tansley, T.L.

  • Author_Institution
    Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    333
  • Lastpage
    336
  • Abstract
    An efficient numerical-analytical method is presented for finding continuum states in quantum-well systems with arbitrary potential profiles, described by coupled Schrodinger equations, such as hole states in semiconductor quantum wells. The method developed is used to examine the scattering of holes in strained layer Si/Si1-xGe x quantum-well heterostructures
  • Keywords
    Ge-Si alloys; Schrodinger equation; elemental semiconductors; semiconductor materials; semiconductor quantum wells; silicon; Si-SiGe; continuum hole states; coupled Schrodinger equations; hole scattering; numerical analysis; potential profile; semiconductor quantum well; strained layer heterostructure; Australia; Capacitive sensors; Eigenvalues and eigenfunctions; Laboratories; Matrices; Particle scattering; Potential well; Quantum well devices; Schrodinger equation; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610138
  • Filename
    610138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2621834