Title :
Optoelectronic determination of density of states in variable to wide band-gap materials
Author_Institution :
Sch. of Phys., Melbourne Univ., Parkville, Vic., Australia
Abstract :
Present paper describes first time use of an opto-electronic technique consisting of a joint measurement of electrical and optical field dependent conduction. The technique is noteworthy in its simplicity and completeness for determining the optoelectronic density. For illustration α-Si:H:N is considered as a prototype of a variable to wide gap material
Keywords :
electronic density of states; energy gap; photoconductivity; wide band gap semiconductors; α-Si:H:N; Si:H,N; conduction; density of states; electrical field; optical field; opto-electronic measurement; variable band-gap material; wide band-gap material; Conducting materials; Crystalline materials; Current measurement; Density measurement; Electron optics; Optical materials; Photonic band gap; Semiconductor materials; Spectroscopy; Temperature dependence;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610139
