DocumentCode
2621845
Title
Optoelectronic determination of density of states in variable to wide band-gap materials
Author
Singh, Jagriti
Author_Institution
Sch. of Phys., Melbourne Univ., Parkville, Vic., Australia
fYear
1996
fDate
8-11 Dec 1996
Firstpage
337
Lastpage
340
Abstract
Present paper describes first time use of an opto-electronic technique consisting of a joint measurement of electrical and optical field dependent conduction. The technique is noteworthy in its simplicity and completeness for determining the optoelectronic density. For illustration α-Si:H:N is considered as a prototype of a variable to wide gap material
Keywords
electronic density of states; energy gap; photoconductivity; wide band gap semiconductors; α-Si:H:N; Si:H,N; conduction; density of states; electrical field; optical field; opto-electronic measurement; variable band-gap material; wide band-gap material; Conducting materials; Crystalline materials; Current measurement; Density measurement; Electron optics; Optical materials; Photonic band gap; Semiconductor materials; Spectroscopy; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-3374-8
Type
conf
DOI
10.1109/COMMAD.1996.610139
Filename
610139
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