Low-loss, low-crosstalk silicon/metal/polyimide (SIMPOL) interconnects for mixed signal silicon MMICs

Author

Yongxi Qian ; Chang, M.F. ; Pingxi Ma ; Itoh, T.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

169

Lastpage

172

Abstract

This paper presents a novel RF interconnect concept for high-density, broadband mixed signal silicon MMICs. Full-wave simulation results indicate that the newly proposed silicon/metal/polyimide (SIMPOL) interconnect has extremely low crosstalk (<-100 dB) from DC up to 50 GHz. Initial test with a simplified structure also reveals very low coupling levels which approach the background noise in measurement.

Keywords

MMIC; crosstalk; integrated circuit interconnections; losses; mixed analogue-digital integrated circuits; polymer films; silicon; 0 to 50 GHz; RF interconnect; Si; Si/metal/polyimide interconnects; broadband MMICs; high-density MMICs; low-crosstalk interconnects; low-loss interconnects; mixed-signal Si MMICs; Distributed parameter circuits; Finite difference methods; Frequency; Insertion loss; Integrated circuit interconnections; MMICs; Polyimides; Silicon; Stripline; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750214

Filename

750214

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2621870