The effect of a SiO/sub 2/ interface layer on CPW lines and Schottky barrier diodes on HRS substrates

Author

Wu, Y. ; Yang, S. ; Gamble, H.S. ; Armstrong, B.M. ; Fusco, V.F. ; Stewert, J.A.C.

Author_Institution

Sch. of Electr. & Electron. Eng., Queen´s Univ., Belfast, UK

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

178

Lastpage

180

Abstract

Aluminium based CPW lines on high resistivity Si (HRS) substrates, and integrated and implanted Schottky barrier diodes have shown bias-dependent leakage current effects. By incorporating a patterned SiO/sub 2/ interface layer between the line conductors and HRS substrate, excellent CPW line performance in terms of leakage current and dissipation loss, and significantly improved Schottky diode isolation can be achieved.

Keywords

MMIC; Schottky diodes; aluminium; coplanar waveguide components; integrated circuit interconnections; leakage currents; losses; silicon; silicon compounds; substrates; Al based CPW; Al-SiO/sub 2/-Si; CPW line performance; Schottky barrier diodes; Si; Si MMIC; SiO/sub 2/ interface layer; bias-dependent leakage current effects; diode isolation; dissipation loss; implanted diodes; patterned interface layer; Aluminum; Conductivity; Conductors; Coplanar waveguides; Leakage current; Microwave measurements; Performance loss; Schottky barriers; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750216

Filename

750216