• DocumentCode
    2621983
  • Title

    Ion implantation into gallium nitride

  • Author

    Williams, J.S. ; Tan, H.H. ; Zolper, J.C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    390
  • Lastpage
    393
  • Abstract
    Implantation of GaN is important for selective doping and isolation applications. This paper reports on the extreme difficulty in removing ion implantation damage from Si-implanted GaN during annealing up to 1100°C
  • Keywords
    III-V semiconductors; annealing; gallium compounds; ion implantation; 1100 C; GaN:Si; annealing; gallium nitride; ion implantation; isolation; selective doping; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Ion implantation; Isolation technology; Laboratories; Nitrogen; Rapid thermal annealing; Semiconductor device doping; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610149
  • Filename
    610149
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2621983