Title :
Luminescence at 1539 nm from erbium and oxygen implanted GaN
Author :
Torvik, J.T. ; Qiu, C.H. ; Feuerstein, R.J. ; Pankove, J.I. ; Namavar, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
Abstract :
Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation
Keywords :
III-V semiconductors; electroluminescence; erbium; gallium compounds; ion implantation; oxygen; photoluminescence; radiative lifetimes; 1539 nm; GaN:Er,O; above-bandgap excitation; absorption; below-bandgap excitation; device fabrication; efficiency; electrical impact excitation; electroluminescence; emission; implanted GaN; photoluminescence; radiative lifetime; time decay; Erbium; Gallium nitride; Luminescence; Optical attenuators; Optical films; Optical pumping; Oxygen; Particle beam optics; Pulse measurements; Stimulated emission;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610150
