Electrical properties of nitrided SiO2 on 6H-SiC by RTP

This paper presents the results of the effect of NO and N₂ O annealing on the electrical characteristics of SiO₂ grown on the Si-faced n- and p-type 6H SiC by rapid thermal processing (RTP). For n-type 6H-SiC, the as-grown SiO₂ in pure O₂ gives near ideal C-V curves. NO annealing has little effect on the C-V curves while N₂O annealing makes the C-V curves shift to the positive voltage. For p-type 6H-SiC, NO annealing improves the C-V curves greatly. But N₂O annealing shifts the C-V curves to the negative voltage. Conductance measurements show that NO annealing decreases the interface state density for both n- and p-type 6H-SiC. N ₂O annealing increases the interface state density for n-type 6H-SiC