Title :
The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD
Author :
Zuo, H.Y. ; Zhou, B. ; Goldys, E.M. ; Paterson, M. ; Tansley, T.L.
Author_Institution :
Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
We report on the present status of a systematic investigation of GaN thin films grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by low temperature laser and plasma enhanced metal-organic chemical vapour deposition. These pre-growth conditions include deposition of buffer layers and surface hydrogenation
Keywords :
III-V semiconductors; chemical vapour deposition; gallium compounds; laser deposition; laser materials processing; plasma CVD; semiconductor growth; semiconductor thin films; substrates; Al2O3; GaAs; GaN; GaN thin film; Si; Si substrate; buffer layer; laser enhanced MOCVD; low temperature growth; plasma enhanced MOCVD; sapphire substrate; semi-insulating GaAs substrate; surface hydrogenation; Buffer layers; Gallium arsenide; Gallium nitride; Laser theory; Plasma applications; Plasma temperature; Semiconductor films; Spectroscopy; Substrates; X-ray diffraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610153
