DocumentCode
2622063
Title
Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates
Author
Zhang, Y. ; Usher, B.F. ; Riley, J.D. ; Huang, X. ; Zou, J. ; Leckey, R.C.G. ; Wolffram, D.
Author_Institution
Sch. of Phys., La Trobe Univ., Bundoora, Vic., Australia
fYear
1996
fDate
8-11 Dec 1996
Firstpage
410
Lastpage
413
Abstract
Most II-VI device structures are grown on GaAs substrates. The lattice mismatch which exists between the epilayer and substrate consequently induces a strain in the epilayer. By relating X-ray measurements of distortion and misorientation of the epilayer unit cell to the defect structure at the ZnSe/GaAs interface, we are able to propose a model for the strain relaxation process in the ZnSe/GaAs system
Keywords
II-VI semiconductors; X-ray diffraction; deformation; interface structure; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; zinc compounds; GaAs substrate; II-VI device; MBE growth; X-ray measurement; ZnSe epilayer; ZnSe-GaAs; distortion; interfacial defect structure; lattice mismatch; misorientation; strain relaxation; Capacitive sensors; Distortion measurement; Electron microscopy; Gallium arsenide; Heterojunctions; Lattices; Optical reflection; Physics; Strain measurement; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-3374-8
Type
conf
DOI
10.1109/COMMAD.1996.610154
Filename
610154
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