Title :
Magnetotransport properties of p-type strained SiGe quantum wells
Author :
Coleridge, P.T. ; Feng, Y. ; Lafontaine, H. ; Sachrajda, A.S. ; Williams, R. ; Zawadzki, P.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
A brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained Si.88Ge.12 quantum wells is described and the results of characterisation using low temperature magnetotransport presented. Comments are also made about the appearance, in some samples, of an insulating phase at low temperatures
Keywords :
Ge-Si alloys; magnetoresistance; semiconductor materials; semiconductor quantum wells; Si0.88Ge0.12; SiGe alloy; growth; insulating phase; low temperature magnetotransport; microelectronic device; modulation doped p-type strained quantum well; Effective mass; Epitaxial layers; Fabrication; Germanium silicon alloys; MOSFET circuits; Magnetic properties; Microelectronics; Silicon germanium; Temperature; Wavelength division multiplexing;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610155
