Electrical generation of terahertz electromagnetic radiations from two-dimensional semiconductor systems at zero and quantizing magnetic fields

Author

Xu, W. ; Zhang, C.

Author_Institution

Dept. of Phys., Wollongong Univ., NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

422

Lastpage

425

Abstract

We present a theoretical study on the electrical generation of terahertz (THz) electromagnetic radiation in AlGaAs/GaAs-based two-dimensional semiconductor systems at zero and quantizing magnetic fields. The intensity of THz blackbody radiation emission and THz cyclotron emission has been calculated as a function of photon frequency and electron temperature. We consider that the electrons are heated by pulsed electric fields and that the hot-electron interactions with electromagnetic fields are mediated by electron-phonon scattering

Keywords

III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; high-frequency effects; hot carriers; semiconductor heterojunctions; two-dimensional electron gas; AlGaAs-GaAs; blackbody radiation emission; cyclotron emission; electrical generation; electron-phonon scattering; hot electron interaction; pulsed electric field; quantizing magnetic field; terahertz electromagnetic radiation; two-dimensional semiconductor system; zero magnetic field; Cyclotrons; Electromagnetic fields; Electromagnetic heating; Electromagnetic radiation; Electromagnetic transients; Electron emission; Frequency; Magnetic fields; Resistance heating; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610156

Filename

610156