An impedance transformer with silicon RF MEMS switches

Author

Nithianandam, Jeyasingh

Author_Institution

Dept. of Electr. & Comput. Eng., Morgan State Univ., Baltimore, MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

536

Lastpage

537

Abstract

An electronically tunable microwave impedance transformer network that is realized with RF microelectromechanical capacitive shunt switches or RF MEMS varactor devices. Scattering parameters of the impedance transformer obtained from HFSS simulations. Finite element electromagnetic calculations is performed using geometry of the actuated MEMS shunt switch. The performance of the proposed device is tested in Serenade circuit simulator and the simulation results that the loss values are low when the resistive loads were greater than 50 ohm.

Keywords

S-parameters; elemental semiconductors; finite element analysis; impedance convertors; microswitches; microwave switches; semiconductor device models; silicon; varactors; MEMS shunt switch; RF MEMS varactor devices; RF microelectromechanical capacitive shunt switches; Serenade circuit simulation; Si; electronically tunable microwave impedance transformer; finite element electromagnetic calculations; resistive loads; scattering parameters; silicon RF MEMS switches; transformer loss; Circuit simulation; Circuit testing; Impedance; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches; Tunable circuits and devices; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272386

Filename

1272386