• DocumentCode
    2622155
  • Title

    Characteristics of the irradiated Hamamatsu p-bulk silicon microstrip sensors

  • Author

    Hara, K. ; Hatano, H. ; Meguro, T. ; Mitsui, S. ; Okuyama, T. ; Yamada, M. ; Ikegami, Y. ; Kohriki, T. ; Terada, S. ; Unno, Y. ; Yamamura, K. ; Kamada, S.

  • Author_Institution
    Institute of Pure and Applied Sciences, University of Tsukuba, Ibaraki 305-8571, Japan
  • fYear
    2008
  • fDate
    19-25 Oct. 2008
  • Firstpage
    1686
  • Lastpage
    1690
  • Abstract
    Microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment. We evaluated the radiation hardness of the sensors fabricated by Hamamatsu Photonics through irradiation with 70-MeV protons up to the fluence of 5 × 1015 1-MeV neq/cm2 and with 60Co γs at a rate foreseen at the Super LHC. The strip isolation and punch-through properties are characterized in detail. Various strip isolation structures, p-stop, p-spray and both combined, are examined. The results are compared among commercially available MCZ and two types of FZ wafers.
  • Keywords
    Electron mobility; Electron traps; Large Hadron Collider; Microstrip; Optoelectronic and photonic sensors; Protons; Sensor phenomena and characterization; Silicon; Strips; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
  • Conference_Location
    Dresden, Germany
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-2714-7
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2008.4774728
  • Filename
    4774728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2622155