Title :
Characteristics of the irradiated Hamamatsu p-bulk silicon microstrip sensors
Author :
Hara, K. ; Hatano, H. ; Meguro, T. ; Mitsui, S. ; Okuyama, T. ; Yamada, M. ; Ikegami, Y. ; Kohriki, T. ; Terada, S. ; Unno, Y. ; Yamamura, K. ; Kamada, S.
Author_Institution :
Institute of Pure and Applied Sciences, University of Tsukuba, Ibaraki 305-8571, Japan
Abstract :
Microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment. We evaluated the radiation hardness of the sensors fabricated by Hamamatsu Photonics through irradiation with 70-MeV protons up to the fluence of 5 × 1015 1-MeV neq/cm2 and with 60Co γs at a rate foreseen at the Super LHC. The strip isolation and punch-through properties are characterized in detail. Various strip isolation structures, p-stop, p-spray and both combined, are examined. The results are compared among commercially available MCZ and two types of FZ wafers.
Keywords :
Electron mobility; Electron traps; Large Hadron Collider; Microstrip; Optoelectronic and photonic sensors; Protons; Sensor phenomena and characterization; Silicon; Strips; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4774728
