Title :
Preparation of In2O3 thin films by sol-gel process for ozone sensing
Author :
Jimenez, C. ; Sun, H.T. ; Wlodarski, W.
Author_Institution :
Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia
Abstract :
In2O3 thin films on sapphire substrates have been prepared from indium isopropoxide solutions by sol-gel process. Highly sensitive films have been obtained by using aged solutions and 500°C annealing temperature. The electrical resistance increases greatly with increasing ozone concentration in the ppb range. The sol-gel-derived sensors have ozone sensitivity as large as 6 at 45 ppb, and working temperature below 200°C
Keywords :
ageing; annealing; gas sensors; indium compounds; ozone; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; 200 C; 500 C; In2O3; In2O3 thin film; O3; ageing; annealing; electrical resistance; indium isopropoxide solution; ozone sensor; sapphire substrate; sol-gel preparation; Acoustic sensors; Annealing; Gases; Sputtering; Substrates; Surface morphology; Temperature sensors; Thin film sensors; Transistors; USA Councils;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610163
