Title :
12.7 A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from −40 to 125°C
Author :
Souri, K. ; Youngcheol Chae ; Thus, Frank ; Makinwa, Kofi
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.
Keywords :
CMOS integrated circuits; analogue-digital conversion; error correction; invertors; low-power electronics; radiofrequency identification; readout electronics; temperature sensors; DTMOST spread; RFID applications; RT; all-CMOS designs; all-CMOS temperature sensor; circuit error mitigation; current 700 nA; dynamic error-correction techniques; dynamic threshold MOST spread; inverter-based 2nd-order zoom ADC; power 600 nW; single room temperature trim; temperature -40 degC to 125 degC; temperature-sensing devices; two-point trimming; ultra-low-power design; voltage 0.85 V; Accuracy; Logic gates; Solid state circuits; System-on-chip; Temperature distribution; Temperature sensors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757409