Title :
12.8 A BJT-based CMOS temperature sensor with a 3.6pJ·K2-resolution FoM
Author :
Heidary, Ali ; Guijie Wang ; Makinwa, Kofi ; Meijer, Gerard
Author_Institution :
Smartec, Breda, Netherlands
Abstract :
This paper presents a precision BJT-based temperature sensor implemented in standard CMOS. Its interface electronics consists of a continuous-time duty-cycle modulator [1], whose output can be easily interfaced to a microcontroller, rather than the discrete-time ΔΣ modulators of most previous work [2-4]. This approach leads to high resolution (3mK in a 2.2ms measurement time) and high energy efficiency, as expressed by a resolution FoM of 3.6pJK2, which is a 3× improvement on the state of the art [4,5]. By employing chopping, dynamic element matching and a single room temperature trim, the sensor also achieves a spread of less than ±0.15°C (3σ) from -45 to 130°C.
Keywords :
CMOS integrated circuits; bipolar transistors; delta-sigma modulation; microcontrollers; temperature sensors; BJT; CMOS; FoM; continuous-time duty-cycle modulator; discrete-time ΔΣ modulators; dynamic element matching; microcontroller; temperature -45 C to 130 C; temperature sensor; time 2.2 ms; CMOS integrated circuits; Clocks; Energy resolution; Noise; Temperature measurement; Temperature sensors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757410