Advances in SiGe HBT BiCMOS technology

Author

Joseph, A. ; Lanzerotti, L. ; Liu, X. ; Sheridan, D. ; Johnson, J. ; Liu, Q. ; Dunn, J. ; Rieh, J.-S. ; Harame, D.

Author_Institution

IBM Microelectron. Div., Semicond. Res. & Dev. Center, Essex Junction, VT, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

1

Lastpage

4

Abstract

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; 0.9 to 77 GHz; BiCMOS technology; CMOS elements; HBT; SiGe; communications; heterojunction bipolar transistor; passive elements; silicon-germanium transistors; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Microelectronics; Research and development; Silicon carbide; Silicon germanium; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398152

Filename

1398152