An 8.4-12.0 GHz down-conversion mixer implemented in SiGe HBT technology

Author

Comeau, Jonathan P. ; Cressler, John D. ; Lee, Jongsoo ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

13

Lastpage

16

Abstract

An 8.4-12.0 GHz down-conversion mixer, implemented in SiGe HBT technology, is presented. The mixer achieves a conversion gain of 12.6 dB, a return loss greater than 14 dB, and a noise figure less than 12.4 dB over the band of operation. The mixer also achieves an input-referred third order intercept point of -0.45 dBm, and an output 1 dB compression point of 2 dBm at an IF of 1.25 GHz, and dissipates only 12 mW for the mixer core, off of a 3.0 V supply. This work also proposes a new mixer figure-of-merit to facilitate a more comprehensive comparison of mixer performance with varying technologies and architectures.

Keywords

Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; 1.25 GHz; 12 mW; 12.4 dB; 12.6 dB; 14 dB; 3.0 V; 8.4 to 12.0 GHz; HBT; SiGe; conversion gain; double-balanced Gilbert cell mixer; down-conversion mixer; input-referred third order intercept point; mixer comparison figure-of-merit; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Monolithic integrated circuits; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398155

Filename

1398155