Title :
Ultrasonic carrier PWM converter employing IGBT in the near future
Author :
Nishimura, Toshi Hiro ; Maranesi, Piero G.
Author_Institution :
Dept. of Electr. Eng., Oita Univ., Japan
Abstract :
The authors describe an ultrasonic PWM (pulse-width modulated) carrier-frequency current sourced power converter employing IGBTs (insulated-gate bipolar transistors) with a self-aligned DMOS structure. The sinusoidal waveform (rather than the ultrasonic corrected triangular waveform) method is employed for the PWM pulse pattern to operate the converter. Because of the ultrasonic PWM carrier frequency, the converter changes the AC line current waveform to a sinusoidal waveform; thus, the convertor´s filter can be small, and its displacement factor is improved
Keywords :
bipolar transistors; insulated gate field effect transistors; power convertors; power transistors; pulse width modulation; AC line current; AC/DC; IGBT; displacement factor; filter; power convertors; power transistor; self-aligned DMOS structure; sinusoidal waveform; ultrasonic PWM carrier; Band pass filters; Circuits; Frequency conversion; Insulated gate bipolar transistors; Low pass filters; Power harmonic filters; Power semiconductor switches; Pulse width modulation; Pulse width modulation converters; Switching converters;
Conference_Titel :
Telecommunications Energy Conference, 1989. INTELEC '89. Conference Proceedings., Eleventh International
Conference_Location :
Florence
DOI :
10.1109/INTLEC.1989.88344
