Title :
Population inversion among electronic subbands in optically pumped semiconductor quantum wells
Author :
Xu, W. ; Zhang, C.
Author_Institution :
Dept. of Phys., Wollongong Univ., NSW, Australia
Abstract :
A theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well structure which may behave as a three-level system to generate far-infrared laser radiations. The results obtained indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g., applying an in-plane control voltage
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; hot carriers; laser theory; optical pumping; population inversion; quantum well lasers; AlGaAs-GaAs; electronic subband; far-infrared laser; hot-electron LO-phonon interaction; optical pumping; population inversion; semiconductor double quantum well; three-level system; Electron optics; Laser excitation; Laser theory; Laser tuning; Optical pumping; Pump lasers; Quantum mechanics; Quantum well lasers; Temperature control; Voltage control;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610167
