A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process

Author

Lee, Sang-Heung ; Bae, Hyun-Chul ; Lee, Seung-Yun ; Kim, Jongdae ; Kim, Bo Woo ; Kang, Jin-Yeong

Author_Institution

Electron. & Telecommun. Res. Inst., South Korea

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

17

Lastpage

20

Abstract

In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 μm SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm×1.6 mm.

Keywords

Ge-Si alloys; MMIC mixers; baluns; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; 0.8 micron; 1 to 6 GHz; 1.6 mm; 2.7 mm; 29 mA; 3.0 V; 4.5 GHz; HBT process; LO/IF input balun circuit; LO/IF isolation; LO/RF isolation; LO/RF wideband matching circuits; MMIC up-conversion mixer; RF output balun circuit; RF transmitter; SiGe; input/output active baluns; power conversion gain; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Isolation technology; MMICs; Radio frequency; Silicon germanium; Transmitters; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398156

Filename

1398156