Title :
On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes
Author :
Morton, Matt ; Andrews, Joel ; Lee, Jongsoo ; Papapolymerou, John ; Cressler, John D. ; Cho, Daehyung ; Hong, Kyushik ; Shin, Heonjong ; Park, Kangwook ; Yi, Sangdon
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper examines the feasibility of implementing transmission lines in a commercially-available SiGe HBT BiCMOS technology. Thin film microstrip transmission lines, using the top and bottom metalization layers (with a 3.24 μm separation), from a 4 layer metal process SiGe HBT technology were designed, fabricated, and measured up to 110 GHz. These measured results were compared to full wave EM simulation results to gain additional design insight. Additional EM simulations were used to explore the effects of design rule changes which do not allow for large extents of ground plane without slotting.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; integrated circuit measurement; integrated circuit modelling; microstrip lines; semiconductor materials; 110 GHz; 3.24 micron; HBT BiCMOS processes; SiGe; full wave EM simulation; slotted ground plane design rules; thin film microstrip transmission lines; top/bottom metalization layers; BiCMOS integrated circuits; Coplanar waveguides; Costs; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Silicon germanium; Transmission line measurements; Transmission lines;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398165
