Low Noise CMOS Analog Front-End Circuit With an 8-bit 1-MS/s ADC for Silicon Sensors for Space Applications

Author

Bouyjou, Florent ; Bernal, Olivier Daniel ; Tap, Helene ; Sauvaud, Jean-Andre ; Jean, P.

Author_Institution

Lab. d´Anal. et d´Archit. des Syst., Inst. de Rech. en Astrophys. et Plantologie, Toulouse, France

Volume

14

Issue

5

fYear

2014

fDate

May-14

Firstpage

1617

Lastpage

1624

Abstract

A low-power analog front-end circuit for silicon (Si) detectors has been fabricated in 0.35- μm CMOS technology. It has been designed to readout signals from large-capacitance Si detectors for incident electron energy ranging from 50 to 725 keV. In order to quantify electron energy, the front-end integrates a charge preamplifier, a pulse shaper, a peak detector, and an event-driven analog-to-digital converter (ADC). The complete front end, including the ADC dissipates 2.5 mW for a maximum electron detecting rate of 650 kHz. The charge-to-voltage gain is 60 mV/fC for a charge range of 0.6 to 32 fF. The measured equivalent noise charge is 3119 e^- for a 40-pF detector parasitic capacitance.

Keywords

CMOS integrated circuits; analogue-digital conversion; elemental semiconductors; low-power electronics; preamplifiers; silicon; silicon radiation detectors; ADC; CMOS technology; Si; charge preamplifier; charge-to-voltage gain; detector parasitic capacitance; electron volt energy 50 keV to 725 keV; equivalent noise charge; event-driven analog-to-digital converter; frequency 650 kHz; incident electron energy; low-power analog front-end circuit; peak detector; power 2.5 mW; pulse shaper; silicon sensors; size 0.35 mum; space applications; CMOS integrated circuits; CMOS technology; Detectors; Noise; Silicon; Transistors; Si detector; charge preamplifier; electron energy measurement;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2013.2295118

Filename

6684292