A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

Author

Vaed, K. ; Eshun, E. ; Bolam, R. ; Stein, K. ; Coolbaugh, D. ; Ahlgren, D. ; Dunn, J.

Author_Institution

IBM Semicond. R & D Center, Hopewell Junction, NY, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

57

Lastpage

60

Abstract

We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (<40 ppm/V) for a high-k MIM dielectric (4.5 fF/m²) that is both Al and Cu BEOL compatible. Also, we discuss the scaling of dielectric films to achieve excellent bias linearity, while attaining a capacitance density of 7.2 fF/m².

Keywords

MIM devices; dielectric materials; dielectric thin films; electric breakdown; integrated circuit reliability; leakage currents; mixed analogue-digital integrated circuits; optimisation; radiofrequency integrated circuits; thin film capacitors; BEOL compatibility; MIM capacitors; RFIC; TDDB; bias linearity; capacitance density; dielectric breakdown; dielectric film scaling; dielectric optimization; dielectric reliability; dielectric voltage linearity; leakage current; manufacturable high-k MIM dielectric; mixed-signal IC; Capacitance; High K dielectric materials; High-K gate dielectrics; Leakage current; Linearity; MIM capacitors; Manufacturing; Radio frequency; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398166

Filename

1398166