DocumentCode :
2622882
Title :
Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
Author :
De Paola, F.M. ; de Vreede, L.C.N. ; Nanver, L.K. ; Rinaldi, N. ; Burghartz, J.N.
Author_Institution :
Naples Univ., Italy
fYear :
2004
fDate :
8-10 Sept. 2004
Firstpage :
69
Lastpage :
72
Abstract :
A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gbit/s driver operation for a 13/15 GHz (fT/fMAX) transistor technology.
Keywords :
argon; bipolar integrated circuits; driver circuits; microwave amplifiers; microwave transistors; network topology; optical communication equipment; silicon; travelling wave amplifiers; 10 Gbit/s; 13 GHz; 15 GHz; argon-enhanced DIMES03 process; bipolar traveling wave amplifier; driver operation; emitter-follower-cascode topology; high-resistivity silicon traveling wave amplifier; microwave transistor; optical communication systems; Argon; Bipolar transistors; Circuits; III-V semiconductor materials; Inductors; Optical amplifiers; Optical design; Optical fiber communication; Semiconductor optical amplifiers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
Type :
conf
DOI :
10.1109/SMIC.2004.1398169
Filename :
1398169
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2622882
بازگشت