Achieving frequency-agile radio

Author

Mukhopadhyay, R. ; Park, Y. ; Lee, J.S. ; Nuttinck, S. ; Cressler, J.D. ; Laskar, J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

85

Lastpage

86

Abstract

This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an active inductor by enhancing the tuning range of a tunable active resistor. This highly tunable active inductor is then used in a VCO that achieves more than 100% of frequency tuning range. All circuits have been fabricated in 0.18 μm SiGe BiCMOS process.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; circuit tuning; frequency agility; inductors; mobile radio; resistors; voltage-controlled oscillators; 0.18 micron; Ge-Si; SiGe BiCMOS process; VCO; bottom-up approach; frequency-agile radio; high bandwidth systems; tunability; tunable active inductor; tunable active resistor; tuning range; Active inductors; Bandwidth; Circuit optimization; Frequency; Germanium silicon alloys; Resistors; Silicon germanium; Tunable circuits and devices; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398173

Filename

1398173