Title :
Gettering of metals to nanocavities in silicon
Author :
Kinomura, A. ; Wong-Leung, J. ; Petravic, M. ; Williams, J.S.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Nanocavities, produced by high dose hydrogen implantation and subsequent annealing in silicon, have been found to provide favourable sites for the gettering of a range of metallic impurities. In this work, the gettering of high concentrations of Au and Cu to cavities is illustrated. In addition, it is shown that low concentrations of Cu (well below the solid solubility limit in silicon) can also be very efficiently gettered to nanocavities
Keywords :
Rutherford backscattering; annealing; elemental semiconductors; getters; impurity distribution; ion implantation; nanostructured materials; secondary ion mass spectra; silicon; transmission electron microscopy; voids (solid); RBS; SIMS; Si; Si:Au; Si:Cu; XTEM; annealing; gettering; high dose H implantation; impurity concentrations; metallic impurities; nanocavities; solid solubility limit; Annealing; Gettering; Gold; Hydrogen; Implants; Impurities; Inorganic materials; Silicon; Solids; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610169
