Title :
16.2 A 0.19pJ/b PVT-variation-tolerant hybrid physically unclonable function circuit for 100% stable secure key generation in 22nm CMOS
Author :
Mathew, Sanu K. ; Satpathy, Sudhir K. ; Anders, Mark A. ; Kaul, Himanshu ; Hsu, S.K. ; Agarwal, Abhishek ; Chen, Gregory K. ; Parker, Rachael J. ; Krishnamurthy, Ram K. ; De, Vivek
Author_Institution :
Intel, Hillsboro, OR, USA
Abstract :
Physically unclonable function (PUF) circuits are low-cost cryptographic primitives used for generation of unique, stable and secure keys or chip IDs for device authentication and data security in high-performance microprocessors [1][2][3][7]. The volatile nature of PUFs provides a high level of security and tamper resistance against invasive probing attacks compared to conventional fuse-based key storage technologies [4]. A process-voltage-temperature (PVT) variation-tolerant all-digital PUF array targeted for on-die generation of 100% stable, device-specific, high-entropy keys is fabricated in 22nm tri-gate high-κ metal-gate CMOS technology [5], featuring: i) a hybrid delay/cross-coupled PUF circuit where interaction of 16 minimum-sized, variation-impacted transistors determines resolution dynamics, ii) a temporal majority voting (TMV) circuit to stabilize occasionally unstable bits, resulting in 53% reduction in instability, iii) burn-in hardening to reinforce manufacturing-time PUF bias, resulting in 22% reduction in bit-errors, iv) soft dark bits for run-time identification and sequestration of highly unstable bits during field operation, resulting in 78% lower bit-errors, v) 19× separation between inter- and intra-PUF Hamming distance, enabling die-specific keys, vi) autocorrelation factor≈0 and entropy=0.9997, while passing NIST randomness tests, vii) high tolerance to voltage and temperature variation with 82% reduction in average Hamming-distance using a 100-cycle dark bit window, viii) in-situ PUF hardening by leveraging directed NBTI aging to improve stability during field operation, and ix) ultra-low energy consumption of 0.19pJ/b with compact bitcell layout of 4.66μm2 (Fig. 16.2.7a).
Keywords :
CMOS integrated circuits; cryptography; high-k dielectric thin films; low-power electronics; microprocessor chips; NIST randomness tests; PUF circuits; PVT-variation-tolerant hybrid physically unclonable function circuit; TMV circuit; chip IDs; dark bit window; data security; device authentication; directed NBTI aging; fuse-based key storage technology; high-performance microprocessors; highly unstable bit sequestration; hybrid delay-cross-coupled PUF circuit; in-situ PUF hardening; inter-PUF Hamming distance; intra-PUF Hamming distance; invasive probing attacks; low-cost cryptographic primitives; manufacturing-time PUF bias; minimum-sized variation-impacted transistors; on-die generation; process-voltage-temperature variation-tolerant all-digital PUF array; resolution dynamics; run-time identification; size 22 nm; soft dark bits; stable device-specific high-entropy keys; stable secure key generation; temporal majority voting circuit; tri-gate high-κ metal-gate CMOS technology; ultra-low energy consumption; Arrays; Clocks; Correlation; Delays; Hamming distance; System-on-chip; Transistors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757433