DocumentCode :
2623079
Title :
Difference-frequency generation of terahertz wave and optical gain in Sb-based quantum wells pumped by near-infrared lasers
Author :
Liu, A. ; Ning, C.Z.
Author_Institution :
Comput. Quantum Optoelectron., NASA Ames Res. Center, Moffett Field, CA, USA
fYear :
2000
fDate :
6-10 Aug. 2000
Firstpage :
56
Lastpage :
58
Abstract :
We study the terahertz (THz) wave generations arising from intersubband transitions in InGaAsInP/AlAsSb quantum wells. Difference-frequency generation and Raman-laser schemes are considered. Both approaches show promises as efficient and compact THz sources.
Keywords :
III-V semiconductors; Raman lasers; aluminium compounds; gallium arsenide; indium compounds; infrared sources; optical frequency conversion; optical pumping; population inversion; quantum well lasers; semiconductor quantum wells; InGaAs-InP-AlAsSb; InGaAs-InP-AlAsSb quantum wells; Raman-laser schemes; Sb-based quantum wells; THz sources; difference-frequency generation; intersubband transitions; near-infrared lasers; optical gain; terahertz wave; Indium phosphide; Laser excitation; Laser transitions; Nonlinear optics; Optical pumping; Pump lasers; Quantum cascade lasers; Quantum computing; Quantum well lasers; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest
Conference_Location :
Kaua´i-Lihue, HI, USA
Print_ISBN :
1-55752-646-X
Type :
conf
DOI :
10.1109/NLO.2000.883573
Filename :
883573
Link To Document :
بازگشت