Difference-frequency generation of terahertz wave and optical gain in Sb-based quantum wells pumped by near-infrared lasers

Author

Liu, A. ; Ning, C.Z.

Author_Institution

Comput. Quantum Optoelectron., NASA Ames Res. Center, Moffett Field, CA, USA

fYear

2000

fDate

6-10 Aug. 2000

Firstpage

56

Lastpage

58

Abstract

We study the terahertz (THz) wave generations arising from intersubband transitions in InGaAsInP/AlAsSb quantum wells. Difference-frequency generation and Raman-laser schemes are considered. Both approaches show promises as efficient and compact THz sources.

Keywords

III-V semiconductors; Raman lasers; aluminium compounds; gallium arsenide; indium compounds; infrared sources; optical frequency conversion; optical pumping; population inversion; quantum well lasers; semiconductor quantum wells; InGaAs-InP-AlAsSb; InGaAs-InP-AlAsSb quantum wells; Raman-laser schemes; Sb-based quantum wells; THz sources; difference-frequency generation; intersubband transitions; near-infrared lasers; optical gain; terahertz wave; Indium phosphide; Laser excitation; Laser transitions; Nonlinear optics; Optical pumping; Pump lasers; Quantum cascade lasers; Quantum computing; Quantum well lasers; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest

Conference_Location

Kaua´i-Lihue, HI, USA

Print_ISBN

1-55752-646-X

Type

conf

DOI

10.1109/NLO.2000.883573

Filename

883573