A statistical tool for probing the coupling between noisy traps in semiconductor devices, with application to 1/f noise in SiGe HBTs

Author

Johansen, Jarle A. ; Birkelund, Yngve ; Jin, Zhenrong ; Cressler, John D.

Author_Institution

Dept. of Phys., Tromso Univ., Norway

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

119

Lastpage

122

Abstract

We have analyzed random telegraph signal noise in the base current of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) from a commercial SiGe HBT technology. We use higher order statistics to test for non-linear coupling between frequency components in the noise signal. We have decomposed the time series into a multilevel random telegraph signal (RTS) and the remaining noise. The random telegraph signal is found to contribute with Lorentzian 1/f²-shaped spectra. We show that the non-linear coupling found is directly connected to the random telegraph signal part of the noise.

Keywords

1/f noise; Ge-Si alloys; electric current; heterojunction bipolar transistors; higher order statistics; semiconductor device noise; time series; 1/f noise; Lorentzian spectra; base current; higher order statistics; noise signal frequency components; noisy traps; nonlinear coupling; random telegraph signal noise; semiconductor devices; silicon-germanium HBT technology; silicon-germanium heterojunction bipolar transistor; time series; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Higher order statistics; Semiconductor device noise; Semiconductor devices; Signal analysis; Silicon germanium; Telegraphy; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398182

Filename

1398182