Title :
Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS
Author :
Niu, Guofu ; Cui, Yan ; Taylor, Stewart S.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
The RF noise of 50 nm gate length CMOS is simulated using hydrodynamic noise simulation. Intrinsic noise sources for the Y- and H-representations are examined and models of intrinsic noise sources are proposed.
Keywords :
CMOS integrated circuits; radiofrequency integrated circuits; random noise; semiconductor device models; semiconductor device noise; 50 nm; CMOS; H-representation model; Y-representation model; hydrodynamic noise simulation; intrinsic noise sources; microscopic RF noise simulation; noise source modeling; Circuit simulation; Integrated circuit modeling; Integrated circuit noise; Microscopy; Monolithic integrated circuits; Radio frequency; Semiconductor device modeling; Silicon;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398183
