Title :
Boosting up performance of power SiGe HBTs using advanced layout concept
Author :
Wang, Guogong ; Qin, Chao ; Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
We report an advanced power device layout structure, namely heat transfer counterbalanced (HTCB) layout, for designing power SiGe HBTs. It is shown that this new power device structure can substantially reduce adverse thermal effects of power devices without using ballasting resistors. Significantly improved power performances have been achieved from SiGe power HBTs employing the new layout concept.
Keywords :
heat transfer; heterojunction bipolar transistors; power bipolar transistors; thermal resistance; SiGe; advanced power device layout structure; ballasting resistors; heat transfer counterbalanced layout; power HBT; power silicon-germanium HBT; power transistors; thermal effects; thermal resistance matrix; Boosting; Electronic ballasts; Fingers; Germanium silicon alloys; Heat transfer; Heterojunction bipolar transistors; Resistors; Silicon germanium; Temperature distribution; Thermal resistance;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398186
