• DocumentCode
    2623284
  • Title

    A high efficient dual path power amplifier for IS-95 CDMA handset applications

  • Author

    Kang, Yun H. ; Jin, Kyoung S. ; Kim, Seon C. ; Lee, Jeong H. ; Kim, Song G. ; Kim, Young S.

  • Author_Institution
    Dept. of Inf. Technol., Handong Global Univ., Pohang, South Korea
  • fYear
    2004
  • fDate
    8-10 Sept. 2004
  • Firstpage
    139
  • Lastpage
    142
  • Abstract
    A highly efficient dual path power amplifier (PA) for IS-95 code division multiple access (CDMA) handset applications is proposed. A dual path PA consists of two different size PAs combined parallely with single input/output matching circuits. The dual path PA operates in two different modes, a high power mode and a low power mode (lower than 16 dBm). A dual path PA is fabricated in an InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic micro-wave integrated circuit (MMIC) for the 1.76 GHz Korea Personal Communication Service (K-PCS), and operates at a supply voltage of 3.4 V. The dual path PA exhibits an output power of 29 dBm, a 46 % power added efficiency (PAE) at 28 dBm output power, and a -39 dBc adjacent channel power ratio (ACPR) at a 1.25 MHz offset frequency in the high power mode and an output power of 24 dBm, a 19 % PAE at a 16 dBm output power level, and a -58 dBc ACPR at a 1.25 MHz offset frequency in the low power mode.
  • Keywords
    MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; mobile handsets; 1.76 GHz; 3.4 V; HBT; IS-95 CDMA handset; InGaP-GaAs; MMIC; PCS; adjacent channel power ratio; code division multiple access; dual path power amplifier; gallium arsenide; heterojunction bipolar transistor; indium gallium phosphide; matching circuits; monolithic micro-wave integrated circuit; offset frequency; power added efficiency; power mode; Bipolar integrated circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Monolithic integrated circuits; Multiaccess communication; Power generation; Telephone sets;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
  • Print_ISBN
    0-7803-8703-1
  • Type

    conf

  • DOI
    10.1109/SMIC.2004.1398187
  • Filename
    1398187