DocumentCode :
262332
Title :
17.10 0.65V-input-voltage 0.6V-output-voltage 30ppm/°C low-dropout regulator with embedded voltage reference for low-power biomedical systems
Author :
Wei-Chung Chen ; Yi-Ping Su ; Yu-Huei Lee ; Chin-Long Wey ; Ke-Horng Chen
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2014
fDate :
9-13 Feb. 2014
Firstpage :
304
Lastpage :
305
Abstract :
Supplying a regulated 0.6V to biomedical systems requires a low dropout (LDO) regulator with a maximum driving current capability of 10mA. One sub-1V voltage reference circuit is commonly used in the conventional LDO design to generate the reference voltage VREF with a low temperature coefficient (TC), as shown in Fig. 17.10.1. VREF is sent to the inverting terminal of the error amplifier (EA) to regulate the output voltage VOUT. The critical path of the voltage headroom exists between VREF and VIN through the inverting terminal and the tail current of the EA. That is, VIN>VSG+VOV+VREF ≈|Vtp|+2VOV+VREF, where VIN is the input supply voltage, Vtp is the threshold voltage of the p-type MOSFET and VOV is the overdrive voltage. If the minimum value of VIN is reduced to 0.65V, the derived VREF should be smaller than 50mV when |Vtp| is 0.4V and |VOV| is 0.1V. Such a sub-1V voltage reference circuit is difficult to design [1]-[4]. Even if VREF can be derived, the offset voltage in the EA will seriously affect the exact value of VREF (≤50mV). In addition, the low noise immunity is another disadvantage that severely affects the performance of the biomedical system.
Keywords :
MOSFET; biomedical electronics; reference circuits; voltage regulators; current 10 mA; embedded voltage reference; error amplifier; low noise immunity; low-dropout regulator; low-power biomedical system; output voltage regulation; p-type MOSFET; temperature coefficient; threshold voltage; voltage 0.6 V; voltage 0.65 V; voltage headroom; voltage reference circuit; CMOS integrated circuits; Circuit stability; MOSFET; Regulators; Temperature measurement; Thermal stability; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4799-0918-6
Type :
conf
DOI :
10.1109/ISSCC.2014.6757445
Filename :
6757445
Link To Document :
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