Title :
Analysis of GaAs-FET noise properties at VHF-/UHF-frequencies
Author_Institution :
MBB Space Syst. Div., Ottobrunn, West Germany
Abstract :
A noise equivalent circuit for two different kinds of GaAs FETs is presented which is based on DC- and S-parameter measurements. It is verified by noise measurements between 50 and 200 MHz. Optimum source impedances were measured for the GaAs-FETs GAT 1/010 and NE 244. The calculated values lie well within the uncertainty limits of the measurements
Keywords :
III-V semiconductors; S-parameters; electron device noise; equivalent circuits; field effect transistors; gallium arsenide; semiconductor device models; 50 to 200 MHz; DC parameter; FET; GAT 1/010; GaAs; III-V semiconductors; NE 244; S-parameter measurements; UHF-frequencies; VHF; noise equivalent circuit; noise measurements; noise properties; Admittance; Capacitance; Circuit noise; Equivalent circuits; Noise measurement; Oscillators; Roentgenium; Thermal resistance; Virtual reality; Voltage;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo
DOI :
10.1109/ISCAS.1988.15475
