DocumentCode
2623422
Title
Analysis of GaAs-FET noise properties at VHF-/UHF-frequencies
Author
Braun, G.
Author_Institution
MBB Space Syst. Div., Ottobrunn, West Germany
fYear
1988
fDate
7-9 Jun 1988
Firstpage
2605
Abstract
A noise equivalent circuit for two different kinds of GaAs FETs is presented which is based on DC- and S-parameter measurements. It is verified by noise measurements between 50 and 200 MHz. Optimum source impedances were measured for the GaAs-FETs GAT 1/010 and NE 244. The calculated values lie well within the uncertainty limits of the measurements
Keywords
III-V semiconductors; S-parameters; electron device noise; equivalent circuits; field effect transistors; gallium arsenide; semiconductor device models; 50 to 200 MHz; DC parameter; FET; GAT 1/010; GaAs; III-V semiconductors; NE 244; S-parameter measurements; UHF-frequencies; VHF; noise equivalent circuit; noise measurements; noise properties; Admittance; Capacitance; Circuit noise; Equivalent circuits; Noise measurement; Oscillators; Roentgenium; Thermal resistance; Virtual reality; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo
Type
conf
DOI
10.1109/ISCAS.1988.15475
Filename
15475
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