Title :
A monolithic reconfigurable tuner with ohmic contact MEMS switches for efficiency optimization of X-band power amplifiers
Author :
Zheng, G. ; Kirby, P.L. ; Pajic, S. ; Pothier, A. ; Blondy, P. ; Papapolymerou, J. ; Popovic, Z.
Author_Institution :
Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The paper presents the first monolithic, microstrip-based X-band tuner with ohmic contact MEMS switches for efficiency optimization of class-E power amplifiers (PAs). The tuner is based on a "3 bit-3 bit" digital design, and uses 6 radial shunt stubs that can be selected via the integrated ohmic contact MEMS switches. The simulation tuning range for post-production efficiency optimization of a 10 GHz amplifier varies from 0.63 Ω to 57 Ω for the real part and from -7.5 Ω to 51.8 Ω for the imaginary part. Measured results of the monolithic tuners fabricated on a silicon substrate show good agreement with the simulation tuning range of the PAs. The measured maximum VSWR is 38, and the tuner size is 6×7 mm2.
Keywords :
MMIC power amplifiers; circuit optimisation; circuit tuning; microstrip components; microswitches; ohmic contacts; silicon; substrates; 10 GHz; 6 mm; 7 mm; VSWR; X-band power amplifier efficiency optimization; class-E power amplifiers; microstrip-based X-band tuner; monolithic reconfigurable tuner; ohmic contact MEMS switches; radial shunt stubs; silicon substrate; tuning range; Impedance; Microstrip; Microswitches; Ohmic contacts; Power amplifiers; Radio frequency; Silicon; Size measurement; Switches; Tuners;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398192
