Title :
Modeling of power supply parasitics for selecting on-wafer bypass capacitance in high-speed IC designs
Author :
He, Qiurong ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We have developed a model for power supply parasitics to select properly the on-wafer bypass capacitor values in high-speed IC designs. The model can allows the chip area to be minimized while maintaining circuit performance. The procedures to develop this model are described and are suitable for all device technologies. An InGaP/GaAs HBT transimpedance amplifier with 10-GHz bandwidth was designed and fabricated. The simulation with the model matches the measured results very well.
Keywords :
amplifiers; bipolar integrated circuits; capacitors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit design; integrated circuit modelling; minimisation; 10 GHz; HBT transimpedance amplifier; InGaP-GaAs; gallium arsenide; high-speed IC designs; indium gallium phosphide; on-wafer bypass capacitance; power supply parasitics modeling; Bandwidth; Capacitors; Circuit optimization; Circuit simulation; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit modeling; Parasitic capacitance; Power supplies;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398196
