A 1.575 GHz BiCMOS GPS low noise amplifier for low power application

Author

Agarwal, Anshul ; Chandel, Gauraw S. ; Biswas, Animesh

Author_Institution

Electr. Eng. Dept., Indian Inst. of Technol., Kanpur, India

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

179

Lastpage

182

Abstract

An integrated circuit representation of an LNA at 1.575 GHz using BiCMOS has been developed for low power applications. A single stage architecture, in conjunction with a tank circuit, is used to optimize the gain and noise performance simultaneously, with a power supply of 3.3 V and current rating of 4 mA. The LNA circuit has been designed with a noise figure of 1.5 dB and gain around 25 dB. To achieve high gain even with low power consumption, the tank circuit has been used and this affects the performance of the circuit in terms of a low third order intercept of the order of -46 dBm.

Keywords

BiCMOS analogue integrated circuits; Global Positioning System; UHF amplifiers; amplification; integrated circuit design; integrated circuit noise; random noise; semiconductor device noise; 1.5 dB; 1.575 GHz; 3.3 V; 4 mA; BiCMOS low noise amplifier; GPS low noise amplifier; circuit design; gain optimization; integrated circuit representation; noise performance optimization; power consumption; single stage architecture; tank circuit; third order intercept; BiCMOS integrated circuits; CMOS process; Energy consumption; Global Positioning System; Impedance; Low-noise amplifiers; Noise figure; Performance gain; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398197

Filename

1398197