SiGe BiCMOS LNA meeting FCC Part 15 ultra-wideband restrictions

Author

Llano, Yolanda Jato ; Guardado, Amparo Herrera

Author_Institution

Commun. Eng. Dept., Cantabria Univ., Santander, Spain

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

183

Lastpage

186

Abstract

A fully integrated SiGe BiCMOS low noise amplifier (LNA) for ultra-wideband (UWB) has been implemented in a 0.4 μm SiGe BiCMOS technology from Motorola Semiconductors. It features a cut-off frequency of 46 GHz. The LNA exhibits a wide bandwidth, from 3 to 10.5 GHz, with a flat gain of 24 dB. This amplifier shows a noise figure below 4.4 dB over the whole bandwidth and achieves good return losses without any matching network. This 3-10.5 GHz SiGe LNA design meets FCC Part 15 restrictions for UWB technology.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; microwave amplifiers; microwave integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; ultra wideband communication; 0.4 micron; 24 dB; 3 to 10.5 GHz; 46 GHz; BiCMOS low noise amplifier; FCC Part 15 restrictions; LNA design; UWB communication; UWB technology; cut-off frequency; gain; matching network; return loss; silicon-germanium alloy; ultra-wideband restrictions; Bandwidth; BiCMOS integrated circuits; Cutoff frequency; FCC; Germanium silicon alloys; Low-noise amplifiers; Semiconductor device noise; Semiconductor optical amplifiers; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398198

Filename

1398198