Title :
TiO2 thin films prepared by sol-gel method for oxygen microsensor application
Author :
Atashbar, M.Z. ; Sun, H.T. ; Wlodarski, W.
Author_Institution :
Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia
Abstract :
Polycrystalline TiO2 thin films have been prepared via a sol-gel method. The film morphology, crystalline phase and chemical composition have been characterized through scanning electron microscopy, X-ray diffraction, and Rutherford backscattering spectrometry. The oxygen sensing characteristics and sensitivity enhancement have been investigated and optimized. The gas sensitivity of TiO2 thin films for the detection of oxygen in the concentration range 10 ppm to 1%, has been evaluated. A sensitivity range between 5 to 8 at working temperatures of 270°C to 320°C has been achieved
Keywords :
Rutherford backscattering; X-ray diffraction; gas sensors; microsensors; scanning electron microscopy; semiconductor materials; semiconductor thin films; sensitivity; sol-gel processing; titanium compounds; 270 to 320 C; O2; O2 microsensor application; O2 sensing characteristics; Rutherford backscattering spectrometry; TiO2; TiO2 thin films; X-ray diffraction; chemical composition; crystalline phase; film morphology; gas sensitivity; polycrystalline thin films; scanning electron microscopy; sensitivity enhancement; sol-gel method preparation; working temperatures; Backscatter; Chemicals; Crystallization; Morphology; Scanning electron microscopy; Spectroscopy; Temperature distribution; Temperature sensors; Transistors; X-ray diffraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610172
