Title :
Dynamic characterization and model comparison of high frequency FET devices
Author :
Dawande, Manjusha
Author_Institution :
Delphi (E&S), Kokomo, IN, USA
Abstract :
A precision dynamic characterization, using fast pulses of varied amplitude with duration of 0.2 μs, is performed on high frequency FET devices. The responsible parameters for large signal models are extracted and the models are developed for static and dynamic characteristics. The binning models for the Statz, TOM and Angelov models are developed in the ADS simulation tool and a comparative evaluation is presented.
Keywords :
circuit simulation; field effect transistor circuits; semiconductor device models; ADS simulation tool; Angelov model; Statz model; TOM model; binning models; fast pulses; high frequency FET devices; large signal models; model comparison; precision dynamic characterization; Dispersion; Electron traps; FETs; Frequency measurement; Pulse amplifiers; Pulse circuits; Pulse measurements; Radio frequency; Radiofrequency identification; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398201
