Title : 
Design of Stable Broadband Tunnel-Diode Amplifiers
         
        
        
        
        
        
        
        
        
            Abstract : 
The design method described here establishes the desired gain at band edges and relies on the symmetry of the circuit reactance characteristic to maintain the gain over the entire band. A design for the 4 Gc to 5 Gc band resulted in a theoretical peak gain of 13 db when the gain at band edges was set at 11 db. Another design for the 5 Gc to 6 Gc range had a peak gain of 15 db.
         
        
            Keywords : 
Admittance; Broadband amplifiers; Circuits; Cutoff frequency; Diodes; Impedance; Inductance; Passband; Shunt (electrical);
         
        
        
        
            Conference_Titel : 
PTGMTT International Symposium Digest, 1964
         
        
            Conference_Location : 
Long Island, NY, USA
         
        
        
            DOI : 
10.1109/PTGMTT.1964.1122448