RF MEMS resonator for CMOS back-end-of-line integration

Author

Pacheco, Sergio ; Zurcher, Peter ; Young, Steven ; Weston, Don ; Daukshe, William

Author_Institution

Microwave & Mixed-Signal Technol. Lab., Freescale Semicond. Inc., Tempe, AZ, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

203

Lastpage

206

Abstract

CMOS back-end-of-line (BEOL) compatible MEMS resonators were fabricated via a low-temperature process flow. The exural-mode resonator beams are made of a bi-layer consisting of a thin TaN and thick SiON 1m. DC measurements of pull-down voltage indicate limitations to operating voltages due to electric field breakdown across the bottom electrode to resonator beam gap. The RF response of the resonators shows resonant frequencies in the 11.0-11.6 MHz range with Q values of 2200.

Keywords

CMOS analogue integrated circuits; low-temperature techniques; micromechanical resonators; microwave integrated circuits; voltage measurement; 11 to 11.6 MHz; BEOL; CMOS back-end-of-line integration; DC measurements; RF MEMS resonator; RF response; SiON; TaN; bi-layer; electric field breakdown; electrode to resonator beam gap; exural-mode resonator beams; low-temperature process flow; pull-down voltage; Breakdown voltage; CMOS process; Electric breakdown; Electric variables measurement; Electrodes; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Resonant frequency; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398203

Filename

1398203