DocumentCode
2623691
Title
Monolithically integrated IMPATT diodes for Ka-band transmitters
Author
Schöllhorn, Claus J. ; Xu, Hongya ; Morschbach, Michael ; Kasper, Erich
Author_Institution
Inst. fur Halbleitertechnik, Univ. Stuttgart, Germany
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
207
Lastpage
210
Abstract
Emanating from S-parameter measurements on monolithically integrated IMPATT diodes in the Ka-band a completely integrated transmitter is designed and simulated. The resonator is built with coplanar waveguides. A planar slot antenna is used for the emission of the RF signal. To improve the performance of the antenna the silicon substrate has to be thinned to a thickness of 200 μm.
Keywords
IMPATT diodes; S-parameters; coplanar waveguides; microwave antennas; radar antennas; radio transmitters; resonators; silicon; slot antennas; 200 micron; Ka-band transmitters; S-parameter measurements; coplanar waveguide resonator; high-frequency radar systems; monolithically integrated IMPATT diodes; performance; planar slot antenna; silicon substrate; Diodes; Monolithic integrated circuits; Radio frequency; Silicon; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN
0-7803-8703-1
Type
conf
DOI
10.1109/SMIC.2004.1398204
Filename
1398204
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