Title :
Development of scalable models for patterned-ground-shield inductors in SiGe BiCMOS technology
Author :
Svitek, Richard ; Klein, Adam S. ; Clifford, Michael ; Raman, Sanjay
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper presents the characterization and modeling of a group of monolithic spiral inductors with various patterned ground shield structures fabricated in a 0.18 μm SiGe:C RFBiCMOS process. A direct comparison of two different types of ground shields, center-grounded (CGS) and perimeter-grounded (PGS), each fabricated in two different conductor levels, polysilicon and metal-one, is made. Fabricated inductors are characterized using on-wafer measurement with de-embedding of pad parasitics. A 36% improvement in the inductor quality factor over the unshielded inductor is realized using the CGS in polysilicon and metal-one, and using the PGS in polysilicon. Finally, a scalable lumped-element model that accounts for the effects of the different ground shield structures is proposed, and preliminary results of model extraction are presented.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Q-factor; earthing; electromagnetic shielding; inductors; lumped parameter networks; radiofrequency integrated circuits; 0.18 micron; Ge-Si:C; RFBiCMOS process; SiGe:C; center-grounded ground shield; inductor quality factor; metal-one conductor levels; model extraction; monolithic spiral inductors; on-wafer measurement; pad parasitics de-embedding; patterned-ground-shield inductors; perimeter-grounded ground shield; polysilicon conductor levels; scalable lumped-element model; Active inductors; BiCMOS integrated circuits; Coils; Conductors; Germanium silicon alloys; Magnetic shielding; Q factor; Silicon germanium; Spirals; Substrates;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398205
