Title :
19.6 Hybrid storage of ReRAM/TLC NAND Flash with RAID-5/6 for cloud data centers
Author :
Tanakamaru, Shuhei ; Yamazawa, Hiroki ; Tokutomi, Tsukasa ; Sheyang Ning ; Takeuchi, Ken
Author_Institution :
Chuo Univ., Tokyo, Japan
Abstract :
A hybrid storage architecture of ReRAM and TLC (3b/cell) NAND Flash with RAID-5/6 is developed to meet cloud data-center requirements of reliability, speed and capacity. The storage controller enhances reliability and performance through five techniques with minimal area overhead. The first three approaches, (i) flexible RRef (FR), (ii) adaptive asymmetric coding (AAC), and (iii) verify trials reduction (VTR), are applied to 50nm ReRAM to improve the bit-error rate (BER) by 69% and performance by 97%. Techniques (iv) balanced RAID-5/6 and (v) bits/cell optimization (BCO) are applied to 2Xnm TLC NAND to reduce the failure rate by 98% and extend the lifetime (write/erase (W/E) cycles) by >22×, respectively.
Keywords :
NAND circuits; cloud computing; computer centres; flash memories; integrated circuit reliability; random-access storage; AAC; BCO; BER; RAID-5/6; VTR; adaptive asymmetric coding; bit-error rate; bits-cell optimization; cloud data centers; failure rate reduction; hybrid ReRAM-TLC NAND flash storage; hybrid storage architecture; minimal area overhead; reliability; size 50 nm; storage controller; verify trials reduction; Bit error rate; Computer architecture; Encoding; Flash memories; Microprocessors; Reliability; Video recording;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757459
