Title :
Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period
Author :
Yairi, M.B. ; Demir, H.V. ; Coldren, C.W. ; Harris, J.S. ; Miller, D.A.D.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
Using surface-normal pulses, a low-power, optically controlled optical gate incorporating two stacked AlGaAs diodes opens and closes within 20 picoseconds with a 30% reflectivity change. Repeated gating with 20 picosecond periods is demonstrated, matching simulations.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; optical logic; optical switches; p-i-n photodiodes; reflectivity; semiconductor quantum wells; 20 ps; AlGaAs; low-power optically controlled optical gate; optoelectronic dual-diode optically controlled optical gate; picosecond periods; picosecond repetition period; reflectivity change; repeated gating; stacked AlGaAs diodes; surface-normal pulses; Optical control; Optical devices; Optical pulses; Optical pumping; Optical solitons; Optical waveguides; P-i-n diodes; Reflectivity; Telecommunication switching; Voltage;
Conference_Titel :
Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest
Conference_Location :
Kaua´i-Lihue, HI, USA
Print_ISBN :
1-55752-646-X
DOI :
10.1109/NLO.2000.883611
