Title :
A direct method to extract the substrate resistance components of RF MOSFETs valid up to 50 GHz
Author :
Kim, Seyoung ; Han, Jeonghu ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A direct method to extract the substrate resistance components of RF MOSFETs has been proposed. The method predicts the output characteristics of MOSFETs accurately up to 50 GHz, while the model with a single substrate resistance was valid up to 15 GHz.
Keywords :
MOSFET; electric resistance; equivalent circuits; microwave field effect transistors; semiconductor device models; substrates; 0 to 50 GHz; RF MOSFET; equivalent circuit; output characteristics; substrate resistance components; Admittance; Data mining; Electrical resistance measurement; Equations; Equivalent circuits; Fingers; Immune system; MOSFETs; Predictive models; Radio frequency;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398211
